Ba2 Bi2 I2 O4

semiconductor

· Ba2 Bi2 I2 O4

Ba₂Bi₂I₂O₄ is a mixed halide–oxide semiconductor compound combining barium, bismuth, iodine, and oxygen elements. This is a research-phase material being investigated for optoelectronic and photovoltaic applications, particularly as part of the broader exploration of lead-free halide perovskite alternatives and bismuth-based semiconductors for next-generation light-emitting and light-absorbing devices. The compound's layered or mixed-anion structure is of interest for tuning bandgap and improving stability compared to pure halide perovskites, though engineering-scale production and device integration remain early-stage.

lead-free perovskitesphotovoltaic researchoptoelectronic deviceshalide semiconductorsthin-film opticsexperimental materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.983	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.978	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2 Bi2 I2 O4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control