Ba₂Al₈S₁₄ is a quaternary sulfide semiconductor compound combining barium, aluminum, and sulfur in a fixed stoichiometric ratio. This material belongs to the family of wide-bandgap semiconductors and is primarily of research interest rather than established commercial production. The compound and related barium-aluminum-sulfide systems are investigated for potential applications in optoelectronics, solid-state lighting, and photocatalysis, where sulfide semiconductors offer advantages in light emission and photochemical activity compared to oxide-based alternatives, though practical device implementation remains limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.102 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.488 | eV/atom | — |