Ba₂Al₄Te₈ is a ternary semiconductor compound combining barium, aluminum, and tellurium elements, belonging to the class of mixed-metal tellurides. This is a research-phase material studied primarily for its potential in thermoelectric applications and optoelectronic devices, where the layered crystal structure and band gap properties offer advantages over conventional semiconductors in specific temperature regimes or spectral ranges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,693.7 | ksi | — | ||
Shear Modulus(G) | 2,152.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.609 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9560 | eV/atom | — |