Ba₂Ag₂Te₂F₂ is an experimental mixed-halide semiconductor compound combining barium, silver, tellurium, and fluorine in a layered or framework structure. This material belongs to the family of halide perovskites and related semiconductors being investigated for optoelectronic and photovoltaic applications, where the combination of heavy elements (Ba, Te) and halide ligands can produce tunable band gaps and interesting transport properties. As a research-stage compound rather than a commercialized material, it represents the broader effort to engineer stable, lead-free alternatives for solar cells, photodetectors, and other light-responsive devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 47.10 | GPa | — | ||
Shear Modulus(G) | 15.24 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.641 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.068 | eV/atom | — |