Ba₂Ag₂P₂ is an ternary intermetallic semiconductor compound combining barium, silver, and phosphorus elements. This is a research-phase material studied for its electronic and structural properties within the broader family of metal phosphides and silver-based semiconductors, which show promise for photovoltaic, thermoelectric, and optoelectronic applications. The material is not yet commercialized at scale but represents the type of engineered compound being explored to address specific band-gap and carrier transport requirements in next-generation energy conversion and sensing technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 55.24 | GPa | — | ||
Shear Modulus(G) | 34.09 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06220 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8140 | eV/atom | — |