Ba10 As6

semiconductor

· Ba10 As6

Ba₁₀As₆ is a barium arsenide compound semiconductor belonging to the family of metal pnictide semiconductors. This is primarily a research material studied for potential optoelectronic and thermoelectric applications, rather than an established commercial semiconductor. The material's layered structure and band gap characteristics make it of interest in the semiconductor research community for exploring novel electronic properties, though industrial adoption remains limited and the compound requires specialized synthesis and handling due to arsenic content.

research semiconductorsthermoelectric materials (experimental)optoelectronic devices (developmental)materials science researchband gap engineering studieshigh-temperature semiconductor applications (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1322	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.108	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba10 As6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control