Ba₁Zn₂As₂ is a ternary semiconductor compound belonging to the III-V family, combining a group II alkaline earth element (barium) with zinc and arsenic. This material is primarily of research interest for optoelectronic and thermoelectric applications, as compounds in this family can exhibit direct bandgaps and potentially useful electrical and thermal transport properties. While not yet widely deployed in commercial products, materials of this composition family are investigated for next-generation photovoltaics, infrared detectors, and solid-state power conversion where conventional binary semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,567.8 | ksi | — | ||
Shear Modulus(G) | 3,725.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.07520 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6850 | eV/atom | — |