Ba₁Zn₁Sb₄O₈ is an inorganic oxide semiconductor compound containing barium, zinc, and antimony in a structured lattice. This material belongs to the family of mixed-metal oxides and represents a research-phase composition studied primarily for its electronic and optical properties in semiconductor applications. Its potential applications center on optoelectronic devices, photocatalysis, and solid-state electronic components where the multi-metal oxide structure provides tunable band gap and charge transport characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00980 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.439 | eV/atom | — |