Ba1 Zn1 Cu4 O8

semiconductor

· Ba1 Zn1 Cu4 O8

Ba₁Zn₁Cu₄O₈ is a mixed-metal oxide semiconductor compound combining barium, zinc, and copper in a defined stoichiometric ratio. This is a research-phase material studied primarily for its potential in electronic and photonic applications, with the copper-zinc oxide framework offering tunable electronic properties characteristic of p-type semiconductors. The material represents active exploration within the broader family of multinary metal oxides for next-generation semiconductor devices where conventional binary oxides prove limiting.

experimental semiconductor devicesphotocatalytic applicationsthin-film electronics researchoptoelectronic materials developmentmetal oxide heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00470	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Zn1 Cu4 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control