Ba1 V4 Zn1 O8

semiconductor

· Ba1 V4 Zn1 O8

Ba₁V₄Zn₁O₈ is an oxide semiconductor compound combining barium, vanadium, and zinc in a mixed-valence structure. This is a research-stage material rather than a commercial product; it belongs to the family of complex oxide semiconductors that are of interest for electronic and photonic applications due to their tunable band gaps and potential ferroelectric or multiferroic properties. The vanadium-oxide framework suggests potential use in catalysis, energy storage, or as a functional ceramic, though specific industrial adoption remains limited pending further development and characterization.

experimental photovoltaicsoxide semiconductor researchcatalytic materials developmentfunctional ceramicssolid-state device prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	16,795.4	ksi	—
Shear Modulus(G)	2,027.6	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01650	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.259	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 V4 Zn1 O8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control