Ba₁Ti₂As₂O₁ is an experimental ceramic semiconductor compound combining barium, titanium, arsenic, and oxygen. This mixed-metal oxide belongs to the family of complex titanium-based ceramics and represents an emerging research material rather than an established industrial compound. The material's potential applications center on semiconductor and optoelectronic device research, where its unique phase composition and electronic properties may offer advantages in photocatalysis, electronic device layers, or specialized sensing applications compared to more conventional binary oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,969.6 | ksi | — | ||
Shear Modulus(G) | 5,693.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03900 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.695 | eV/atom | — |