Ba1 Si6 N8

semiconductor

· Ba1 Si6 N8

Ba₁Si₆N₈ is a barium silicon nitride ceramic compound belonging to the family of advanced nitride ceramics. This material is primarily investigated in research contexts for high-temperature structural and electronic applications, where its nitride backbone offers potential for thermal stability, hardness, and wide bandgap semiconductor behavior. Compared to conventional ceramics, barium silicon nitrides are explored for specialized roles in high-temperature electronics, refractories, and potentially as wide-bandgap semiconductors, though industrial adoption remains limited and largely confined to experimental development.

high-temperature semiconductorsrefractory materialswide-bandgap electronicsresearch ceramicsthermal structural applicationsadvanced nitride compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.426	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.238	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Si6 N8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control