Ba₁Si₂ is an intermetallic semiconductor compound composed of barium and silicon, belonging to the family of metal silicides that exhibit semiconducting behavior. This material is primarily of research interest for potential applications in thermoelectric devices and optoelectronic components, where its electronic properties and thermal characteristics could offer advantages over conventional semiconductors in specific temperature or doping regimes. While not widely commercialized, barium silicide compounds are explored in materials science for their potential to fill niche roles in high-temperature electronics and energy conversion systems where traditional semiconductors face limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 50.90 | GPa | — | ||
Shear Modulus(G) | 41.04 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00720 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3870 | eV/atom | — |