Ba1 Si1 Tc2

semiconductor

· Ba1 Si1 Tc2

Ba₁Si₁Tc₂ is an intermetallic semiconductor compound combining barium, silicon, and technetium in a defined stoichiometric ratio. This is a research-phase material studied primarily in materials science and solid-state physics contexts rather than established industrial production. The technetium-bearing composition positions this in exploratory materials research, where it may be investigated for specialized electronic or photonic applications where the unique electronic structure of the Ba-Si-Tc system offers potential advantages over conventional semiconductors, though practical engineering deployment remains limited.

experimental semiconductorssolid-state physics researchadvanced electronic materialsradioisotope-bearing compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02440	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9950	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Si1 Tc2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control