Ba₁Si₁B₁ is an experimental ternary compound combining barium, silicon, and boron in equimolar proportions, belonging to the family of boron-silicon ceramics and intermetallics. This material is primarily of research interest for semiconductor and electronic applications, as the barium-silicide-borate system offers potential for wide-bandgap semiconducting behavior and thermal stability. Unlike established silicon carbide or gallium nitride semiconductors, ternary Ba-Si-B compounds remain largely in development stages and are investigated for specialized high-temperature electronics, photonics, and potential thermoelectric applications where multi-element bonding networks could provide novel property combinations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01680 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.071 | eV/atom | — |