Barium selenide (BaSe) is an inorganic compound semiconductor belonging to the II-VI semiconductor family, characterized by ionic bonding between barium and selenium atoms. This material is primarily of research and specialized industrial interest, utilized in infrared optics, photodetectors, and radiation detection applications due to its wide bandgap and optical transparency in the infrared spectrum. BaSe represents a niche alternative to more common II-VI semiconductors like CdSe or ZnSe when specific thermal stability or spectral response characteristics are required, though it sees limited mainstream adoption compared to more established semiconductor compounds.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 43.63 | GPa | — | ||
Shear Modulus(G) | 25.82 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.258 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.002 | eV/atom | — |