Ba₁Mg₂Bi₂ is an intermetallic semiconductor compound combining barium, magnesium, and bismuth in a stoichiometric ratio. This is a research-stage material belonging to the family of ternary bismuth intermetallics, studied for potential thermoelectric and optoelectronic applications where the combination of metallic and semiconducting character offers tunable electronic properties. The material's potential relevance lies in energy conversion and quantum material research, though it remains largely in the exploratory phase without established commercial production or widespread industrial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34.06 | GPa | — | ||
Shear Modulus(G) | 22.67 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2145 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6900 | eV/atom | — |