Ba₁Mg₂As₂ is an intermetallic semiconductor compound belonging to the Zintl phase family, combining alkaline earth (barium), alkaline earth (magnesium), and pnictogen (arsenic) elements. This material is primarily of research interest rather than established in high-volume manufacturing, investigated for its potential electronic and optoelectronic properties within the broader class of III-V and Zintl semiconductors. The compound's notable structural and electronic characteristics make it relevant to exploratory semiconductor development, though practical applications remain largely in the laboratory and computational modeling phase.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,982.7 | ksi | — | ||
Shear Modulus(G) | 5,161.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.152 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.040 | eV/atom | — |