Ba1 Mg1 Mn4 O8

semiconductor

· Ba1 Mg1 Mn4 O8

Ba₁Mg₁Mn₄O₈ is a mixed-metal oxide semiconductor belonging to the spinel or related oxide family, containing barium, magnesium, and manganese in a structured ceramic lattice. This is primarily a research and exploratory compound studied for potential electrochemical and magnetic applications; it is not yet established in mainstream industrial production. The material's mixed-valence manganese content and barium-magnesium co-doping make it of interest for catalysis, energy storage device electrodes, and magnetic semiconductor research, where it may offer tunable electronic and redox properties compared to single-metal oxide alternatives.

experimental oxide semiconductorscatalytic materials researchbattery/energy storage electrodesmagnetic semiconductor devicesmixed-metal oxide studieselectrochemical applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.024	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Mg1 Mn4 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control