Ba₁Mg₁Bi₄O₈ is a mixed-metal oxide semiconductor compound containing barium, magnesium, and bismuth in a complex crystalline structure. This is primarily a research material rather than an established commercial compound, studied within the broader family of bismuth-containing oxides and perovskite-related materials that show promise for photocatalytic and optoelectronic applications. The combination of bismuth (known for visible-light absorption) with alkaline-earth metals suggests potential in photocatalysis, sensing, or next-generation semiconductor devices, though practical engineering deployment remains limited to specialized research contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6816 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.609 | eV/atom | — |