Ba1 Mg1 Ag4 O8

semiconductor

· Ba1 Mg1 Ag4 O8

Ba₁Mg₁Ag₄O₈ is an experimental mixed-metal oxide semiconductor combining barium, magnesium, and silver in a structured lattice. This compound belongs to the family of complex oxides and is primarily of research interest for investigating novel electronic and photonic properties that arise from the combination of alkaline earth metals (Ba, Mg) with a transition metal (Ag) in controlled stoichiometry. Industrial applications remain limited, but the material family shows potential in optoelectronics and catalysis where the unique band structure and mixed-valence chemistry could offer advantages over conventional single-phase semiconductors.

experimental optoelectronicsphotocatalysis researchsolid-state chemistrythin-film semiconductorsband-gap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00110	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6640	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Mg1 Ag4 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control