BaLiAs is an intermetallic semiconductor compound combining barium, lithium, and arsenic in a 1:1:1 stoichiometry. This is a research-phase material with limited commercial production; it belongs to the broader family of III-V and related semiconductors being investigated for optoelectronic and thermoelectric applications. The compound's potential lies in niche photonic and energy-conversion devices where its bandgap and carrier properties may offer advantages over conventional semiconductors, though its practical engineering adoption remains nascent and its environmental/stability characteristics require careful evaluation.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,361.6 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,672.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1672 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.035 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data