Ba₁In₂Te₄ is a ternary semiconductor compound belonging to the class of chalcogenide semiconductors, combining barium, indium, and tellurium. This material is primarily of research and development interest for optoelectronic and thermoelectric applications, where the bandgap and carrier transport properties of mixed-metal tellurides offer potential advantages over binary semiconductors. The compound is notable within the family of complex semiconductors for its potential use in infrared detection, photovoltaics, and thermoelectric energy conversion, though it remains largely in the experimental phase with limited commercial deployment compared to more established III-V or II-VI semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23.98 | GPa | — | ||
Shear Modulus(G) | 14.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.018 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7730 | eV/atom | — |