Barium hafnium sulfide (BaHfS₃) is an experimental ternary semiconductor compound combining alkaline earth, refractory, and chalcogenide elements. This material belongs to the broader family of metal sulfides and hafnium-based semiconductors, which are under investigation for optoelectronic and photovoltaic applications where wide bandgaps and thermal stability are advantageous. While not yet in widespread commercial production, BaHfS₃ represents a research-phase candidate for next-generation semiconductor devices that require enhanced chemical durability and resistance to high-temperature environments compared to conventional III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 81.09 | GPa | — | ||
Shear Modulus(G) | 47.13 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7357 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.994 | eV/atom | — |