Ba1 Hf1 O3

semiconductor

· Ba1 Hf1 O3

Barium hafnate (BaHfO₃) is a perovskite-structured ceramic compound combining barium and hafnium oxides, functioning as a wide-bandgap semiconductor. This material is primarily of research and developmental interest rather than established production use, being investigated for high-temperature applications where conventional semiconductors fail, particularly in extreme environments and advanced electronic devices. Its perovskite structure and hafnium content make it attractive for studies in solid-state electrolytes, refractory coatings, and next-generation high-temperature electronics, though commercial applications remain limited compared to conventional oxide semiconductors.

high-temperature electronicssolid-state electrolytesrefractory coatingsaerospace thermal barriersresearch semiconductorsextreme-environment sensors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	24,395.3	ksi	—
Shear Modulus(G)	15,768.5	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.683	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.650	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Hf1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control