Ba1 Ga1 Sn1 H1

semiconductor

· Ba1 Ga1 Sn1 H1

BaGaSnH is an experimental ternary hydride compound combining barium, gallium, and tin with hydrogen, belonging to the metal hydride semiconductor family. This material is primarily of research interest for exploring novel hydrogen-storage mechanisms and semiconductor properties in complex hydride systems, rather than established industrial production. The compound represents early-stage investigation into how multi-metallic hydrides might enable new pathways in energy storage, solid-state electronics, or catalysis—areas where metal hydrides have shown potential but face practical barriers compared to conventional semiconductors and batteries.

hydrogen storage researchexperimental semiconductorsadvanced battery materialssolid-state electronics developmentmaterials discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04770	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5630	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Ga1 Sn1 H1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control