Ba1 Ga1 Si1 H1

semiconductor

· Ba1 Ga1 Si1 H1

BaGaSiH is an experimental semiconductor compound combining barium, gallium, silicon, and hydrogen in a 1:1:1:1 stoichiometry. This is a research-phase material within the broader family of III-V semiconductors and mixed-metal hydride systems, not yet established in commercial production. The compound's potential lies in wide-bandgap semiconductor applications and hydrogen storage research, though practical engineering use remains limited to laboratory investigation of novel optoelectronic and energy storage device architectures.

experimental wide-bandgap semiconductorshydrogen storage researchoptoelectronic device prototypingmaterials science researchsolid-state physics investigationemerging energy conversion devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04580	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4670	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Ga1 Si1 H1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control