Ba1 Ga1 Ge1 H1

semiconductor

· Ba1 Ga1 Ge1 H1

BaGaGeH is an experimental semiconductor compound combining barium, gallium, germanium, and hydrogen—a rare quaternary hydride system not yet commercialized. This material belongs to the III-V semiconductor family and is primarily of research interest for exploring novel band structure engineering and potential optoelectronic or photovoltaic applications, though industrial adoption remains limited and material synthesis and characterization are active research areas.

experimental optoelectronicssemiconductor researchphotovoltaic developmentband engineering studiescompound semiconductor researchmaterials science prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	45.81	GPa	—
Shear Modulus(G)	37.53	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1923	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5550	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Ga1 Ge1 H1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control