Ba₁Cd₂As₂ is a ternary intermetallic semiconductor compound composed of barium, cadmium, and arsenic. This material belongs to the family of III-V and mixed-valence semiconductors and is primarily of research interest rather than established in high-volume industrial production. The compound is studied for potential optoelectronic and thermoelectric applications, where its band structure and carrier transport properties may offer advantages in specialized devices operating at specific temperature ranges or wavelength regions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01130 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6650 | eV/atom | — |