Ba1 Ca1 Ga4 O8
semiconductorBa₁Ca₁Ga₄O₈ is an oxide semiconductor compound combining barium, calcium, gallium, and oxygen in a complex crystal structure. This material belongs to the family of mixed-metal gallate semiconductors, which are primarily of research interest for optoelectronic and photonic applications rather than established industrial commodities. The compound is notable for its potential in UV-responsive photocatalysis, scintillation detection, and possibly phosphor or luminescent device applications, though it remains largely in the experimental phase; engineers would consider it for advanced device prototyping where tunable bandgap and mixed-metal functionality provide design advantages over conventional single-element oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |