Ba1 Ca1 Bi4 O8

semiconductor

· Ba1 Ca1 Bi4 O8

Ba₁Ca₁Bi₄O₈ is an oxide semiconductor compound belonging to the bismuth-based mixed-metal oxide family, which is primarily of research and exploratory interest rather than established industrial use. This material represents the broader class of layered bismuth oxides that show promise for photocatalytic and optoelectronic applications due to bismuth's electronic structure; it is being investigated in academic and laboratory settings for potential use in light-driven catalysis, sensing, and related functional oxide applications where bismuth-containing systems can offer unique band gap characteristics.

photocatalytic materials (research)optoelectronic devices (emerging)environmental remediation (experimental)oxide semiconductor researchthin-film deposition studiessolar energy conversion (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.040	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.718	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Ca1 Bi4 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control