Ba₁Bi₂O₅ is a bismuth-barium oxide ceramic compound belonging to the mixed-valence oxide semiconductor family. This material is primarily investigated in research contexts for photocatalytic and optoelectronic applications, where bismuth-containing oxides are valued for their narrow bandgaps and visible-light activity. Notable advantages over conventional semiconductors include potential cost-effectiveness and non-toxicity compared to cadmium or lead-based alternatives, though commercial applications remain limited to specialized research and development rather than established industrial use.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,468.5 | ksi | — | ||
Shear Modulus(G) | 3,173.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01360 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.509 | eV/atom | — |