Ba₁Be₂Te₁ is an experimental ternary compound semiconductor composed of barium, beryllium, and tellurium. This material belongs to the family of wide-bandgap semiconductors and remains primarily a research-phase compound with limited industrial deployment; it is studied for potential optoelectronic and high-temperature semiconductor applications due to the thermal stability and electronic properties associated with beryllium and tellurium-based systems. The combination of these three elements is relatively uncommon, making this material of interest for exploratory research into new semiconductor phases rather than established manufacturing applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03390 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.4560 | eV/atom | — |