Ba₁B₆ is an experimental hexaboride semiconductor compound in the rare-earth boride family, synthesized primarily for research into advanced electronic and thermal materials. While not yet established in high-volume commercial production, hexaborides are investigated for applications requiring high hardness, thermal stability, and tunable electrical properties, offering potential advantages over traditional semiconductors in extreme-environment applications. The material represents the broader hexaboride class's promise for next-generation thermoelectric devices, high-temperature electronics, and wear-resistant coatings, though commercial viability and scalability remain under development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,451.1 | ksi | — | ||
Shear Modulus(G) | 19,675.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04120 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4580 | eV/atom | — |