Ba1 Al1 Si1 H1

semiconductor

· Ba1 Al1 Si1 H1

BaAlSiH is an experimental intermetallic hydride compound combining barium, aluminum, and silicon with hydrogen incorporation. This material family is primarily under active research as a potential candidate for hydrogen storage applications and advanced semiconductor devices, rather than established industrial production. The compound represents exploration into lightweight metal hydrides that could enable next-generation energy storage systems or electronic applications, though it remains in the development phase with limited commercial deployment.

hydrogen storage researchsemiconductor devices (experimental)lightweight structural composites (emerging)solid-state energy systemsmaterials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	52.92	GPa	—
Shear Modulus(G)	41.79	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8065	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5330	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Al1 Si1 H1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control