Ba(ZnAs)₂ is a ternary semiconductor compound belonging to the chalcopyrite family, combining barium, zinc, and arsenic in a structured lattice. This material is primarily of research interest rather than established in high-volume industrial production, with potential applications in optoelectronic devices, photovoltaic systems, and high-frequency electronics where III-V and related compound semiconductors are explored. Engineers would consider this material for specialized research or prototype applications requiring tunable band gap properties, though it remains less commercialized than conventional alternatives like GaAs or InP.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,019.3 | ksi | — | ||
Shear Modulus(G) | 3,329.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2300 | eV | — |