Ba(GaSe₂)₂ is a ternary chalcogenide semiconductor compound combining barium, gallium, and selenium in a layered crystal structure. This material belongs to the family of metal gallium diselenides and is primarily investigated in research and development contexts for optoelectronic and photovoltaic applications where wide bandgap semiconductors with non-linear optical properties are needed. It is notable for potential use in infrared detection, frequency conversion, and solar energy conversion due to its semiconductor characteristics and crystal chemistry, though it remains largely in the experimental phase compared to more established wide-bandgap alternatives like GaAs or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.160 | eV | — |