B50 is a boron-based semiconductor material, likely a boron compound or boron-doped semiconductor variant used in specialized electronic and optoelectronic applications. The material belongs to the broader family of semiconductors engineered for high-temperature operation, radiation hardness, or wide bandgap applications where standard silicon devices are insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01930 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2190 | eV/atom | — |