B₄S₁₂Rb₄ is an experimental boron sulfide compound with rubidium incorporation, representing a emerging class of mixed-metal chalcogenides in semiconductor research. This material belongs to the family of boron-sulfur compounds that are being investigated for potential optoelectronic and photovoltaic applications due to their tunable bandgap and layered crystal structure. While not yet commercialized, compounds in this family show promise for next-generation solid-state electronics where designers seek alternatives to conventional semiconductors with enhanced thermal stability or novel electronic properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,327.7 | ksi | — | ||
Shear Modulus(G) | 1,886.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.338 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8190 | eV/atom | — |