B₄Os₂ is an experimental boron-osmium oxide compound classified as a semiconductor, representing a mixed-valence ceramic material in the boron-transition metal oxide family. While not yet established in commercial applications, this compound is of research interest for its potential in high-temperature electronics, hard coatings, and extreme-environment semiconducting devices, given the known stability and hardness of boron oxides combined with osmium's high density and refractory properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 44,616.8 | ksi | — | ||
Shear Modulus(G) | 25,885.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00320 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1750 | eV/atom | — |