B₄Mo₂ is a transition metal boride semiconductor compound combining boron and molybdenum, belonging to the family of refractory ceramic materials. This is a research-phase material under investigation for its potential in high-temperature semiconducting and thermoelectric applications, where the combination of metallic and ceramic properties offers advantages in harsh environments. Interest in this compound centers on its potential for power electronics, high-temperature sensing, and materials systems where conventional semiconductors degrade, though industrial adoption remains limited pending further development and characterization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 297.2 | GPa | — | ||
Shear Modulus(G) | 219.4 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4070 | eV/atom | — |