B3Pb3NO10

semiconductor

· B3Pb3NO10

B3Pb3NO10 is an experimental mixed-metal oxide semiconductor containing bismuth, lead, and nitrogen. This compound belongs to the family of ternary and quaternary oxides under investigation for photocatalytic and electronic applications, representing an emerging class of materials designed to exploit the electronic properties of lead and bismuth polyoxides. While not yet established in high-volume industrial production, materials in this compositional family are of research interest for environmental remediation and optoelectronic device development, where layered or perovskite-related structures can offer tunable bandgaps and enhanced charge transport compared to single-oxide semiconductors.

photocatalytic water treatmentexperimental optoelectronicsbismuth-lead oxide researchvisible-light photocatalysissemiconductor screeningmaterials discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.640	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

B3Pb3NO10

Electrical Properties

Regulatory Screening

Environmental

Export Control