B₂S₃ is a binary ceramic compound composed of boron and sulfur, belonging to the broader family of boron chalcogenides. This material is primarily of academic and research interest rather than established industrial production, with potential applications in optical and photonic devices due to its wide bandgap semiconductor characteristics. While not yet mature for widespread commercial use, B₂S₃ represents a candidate material for infrared optics, thin-film coatings, and emerging applications in solid-state electronics where its chemical stability and refractory properties could offer advantages over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 220.0 | MPa | — | ||
Poisson's Ratio(ν) | 0.3200 | - | — | ||
Shear Modulus(G) | 230.0 | MPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.182 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.331 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.568 | - | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -136.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5230 | eV/atom | — | ||
| ↳ | -0.4047 | eV/atom | — |