B2AsP is a ceramic compound belonging to the boron arsenide phosphide family, combining elements from III-V semiconductor and ceramic material systems. This material exists primarily in research and development contexts as a potential wide-bandgap semiconductor or hard ceramic, with the B2 structure suggesting a refractory compound suitable for extreme environments. While not yet established in mainstream engineering applications, compounds in this family are investigated for high-temperature electronics, radiation-hard devices, and ultra-hard coating applications where conventional semiconductors and ceramics reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,369.9 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.1300 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 20,898.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1489 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.288 | eV | DFT · OptB88vdW | ||
| ↳ | 1.750 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.529 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 9.417 | - | DFT · OptB88vdW | ||
| ↳ | 8.223 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.7300 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.3867 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.06037 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00298 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00242 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -226.7 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 182.5 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 28.34 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.07090 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2174 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data