B2AsP is a ceramic compound belonging to the boron arsenide phosphide family, combining elements from III-V semiconductor and ceramic material systems. This material exists primarily in research and development contexts as a potential wide-bandgap semiconductor or hard ceramic, with the B2 structure suggesting a refractory compound suitable for extreme environments. While not yet established in mainstream engineering applications, compounds in this family are investigated for high-temperature electronics, radiation-hard devices, and ultra-hard coating applications where conventional semiconductors and ceramics reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 147.3 | GPa | — | ||
Poisson's Ratio(ν) | 0.1300 | - | — | ||
Shear Modulus(G) | 144.1 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.122 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.288 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.529 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.06037 | C/m² | — | ||
Seebeck Coefficient(S) | -226.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.07090 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2174 | eV/atom | — |