B28 is a semiconductor material from the boron-based compound family, likely a boron nitride variant or boron-containing III-V semiconductor given its classification. While specific composition details are not provided, materials in this family are valued for their wide bandgap properties, high thermal stability, and electrical characteristics that distinguish them from conventional silicon-based semiconductors. B28 is typically employed in high-temperature electronics, power devices, and optoelectronic applications where thermal management and operational reliability above standard silicon limits are critical requirements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 32,233.8 | ksi | — | ||
Shear Modulus(G) | 33,629.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.642 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.02300 | eV/atom | — |