B2 W1 is a semiconductor material within the tungsten-boron chemical family, likely a tungsten boride compound exhibiting the B2 crystal structure common to intermetallic phases. This material represents research-phase development in the high-refractory semiconductor space, where tungsten borides are explored for extreme-environment applications requiring both semiconductor properties and exceptional thermal/mechanical stability.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 46,165.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 23,110.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04190 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.02600 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data