B₂Sb₂O₆ is a binary oxide semiconductor compound belonging to the family of metal oxides with potential applications in electronic and photonic devices. This material is primarily of research interest rather than established industrial production, investigated for its semiconducting properties and potential use in optoelectronic applications where tunable band gap characteristics and oxide stability are valuable. The compound's mechanical rigidity and oxide-based chemistry make it a candidate for studying mixed-valence metal oxide systems relevant to next-generation electronic materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 36.70 | GPa | — | ||
Shear Modulus(G) | 27.74 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.920 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.965 | eV/atom | — |