B2 P2 is a semiconductor compound belonging to the boron-phosphide material family, characterized by a binary III-V structure. This material is investigated primarily in research contexts for high-temperature and high-power electronic applications, where its wide bandgap and thermal stability offer potential advantages over conventional semiconductors like silicon and gallium arsenide. Its notable mechanical stiffness makes it a candidate for extreme environment electronics, though industrial adoption remains limited compared to more established wide-bandgap semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23,483.2 | ksi | — | ||
Shear Modulus(G) | 23,993.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.377 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4390 | eV/atom | — |