B₂O₆Mn₁Sn₁ is an experimental mixed-metal borate semiconductor combining manganese and tin oxides within a borate matrix. This compound belongs to the family of multivalent metal borates under active research for functional electronic and photonic applications. The combination of transition metal (Mn) and post-transition metal (Sn) dopants in a borate host is designed to engineer band structure and enable novel semiconducting behavior not readily accessible in single-dopant or binary oxide systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,027.4 | ksi | — | ||
Shear Modulus(G) | 10,909.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7356 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.142 | eV/atom | — |